products catalogs of Baoji Zhipu

March 10, 2022

Tungsten heating elements : Purity:99.95%

Density: 19.1g/cm3

Application temperature environment: ≤2400℃ Cooper base: Cu≥99.95%

Denisity: ≥8.8%

Application temperature environment: ≤1000℃

Product name: tungsten net heating element Material grades: W1

Execution standard: GB3875-83 Product specifications: Ф0.3-Φ 4

The surface of the tungsten wire: bright surface Tungsten wire mesh is composed of tungsten preparation for ultra high temperature vacuum annealing furnace.

Technological process:

W, Mo powder--pressed--sintered--forged--technological processing--finished products inspected—packaged—delivered

Seed crystal clip

A、Physical and chemical properties:

1、Purity: Mo≥99.95%、W≥99.95%;

2、Denisity: Mo≥10.2g/cm³、W≥19.2g/cm³; 3、Temperature environment: ≤2300℃;

4、Thermal expansivity(0—1600C):Mo:6×10-6、W:4.98×10-6 5、Yield strength: Mo(1600℃):50MPa、W(2080℃):25MPa;

6、Perfect recrystalization temperature:W 2050℃、Mo 1050℃.

B、Product dimensions and tolerances: seed crystal rod custom processing specific dimensions and tolerances according to customer's drawings.

More than long sapphire crystal furnace tungsten molybdenum parts according to the drawings of the technical requirements for the design and manufacture, meet the requirements of customers, implement GB/T1804-200, GB1801-79, GB3875-83, GB8918-2006 and the company internal control standard—inspection—packaging—delivery technology processing.

Ionization ion source is the neutral atoms or molecules, and to extract ion beam device. It is various kinds of ion accelerator, mass spectrometer, electromagnetic isotope separator, ion implantation, ion beam etching device, ion thruster and controlled fusion device in the neutral beam injector equipment such as indispensable components.

emiconductor epitaxy equipment tungsten molybdenum parts: GaNrefractory-MOCVD electronics, equipment set precision machinery, optics, chemistry, computing the multidisciplinary is an organic whole, is a high degree of automation, the price is expensive, high technology integration of cutting-edge optoelectronic specialized equipment, used for GaN epitaxial growth of semiconductor materials and the manufacture of light-emitting diode (LED) chip. MOCVD equipment dedicated tungsten, molybdenum parts: upper and lower heat insulation piece, tungsten heater in middle, CLP plate, shutter valve insulation, cooling and heat insulation board such as deep processing products.